FPGA-Based Implementation of Reverse Electrical Pulse Stress and Measurement system for Gallium Nitride High-Electron-Mobility Transistors

Physics Based Virtual Source Compact Model of Gallium-Nitride High Electron Mobility Transistors

Simulation of Gallium-Arsenide Based High Electron Mobility Transistors

We present results for hydrodynamic simulations of pseudomorphic AlGaAs/InGaAs/GaAs High Electron Mobility Transistors (HEMTs) obtained by the two-dimensional device simulator MINIMOS-NT. The concise analysis of industrially relevant HEMT power devices of two different foundries for gate-lengths between lg = 140 nm and lg = 300 nm is carried out. Several aspects, including thermal and breakdown...

COMPARISON OF GALLIUM NITRIDE HIGH ELECTRON MOBILITY TRANSISTORS MODELING IN TWO AND THREE DIMENSIONS by

Electrical Reliability of GaN High Electron Mobility Transistors

As a result of their large band gap (~3.4 eV) and high breakdown electric field (>3x106 V/cm), GaN-based devices can operate at voltages higher than 100 V. Also, due to the strong piezoelectric effect and spontaneous polarization of both GaN and AlN, a high sheet carrier density (~1013 cm-2) can be achieved at the AlGaN/GaN heterointerface without any doping. In addition, high electron mobility...

Effects of hydrostatic pressure and temperature on the AlGaN/GaN High electron mobility transistors

In this paper, drain-source current, transconductance and cutoff frequency in AlGaN/GaN high electron mobility transistors have been investigated. In order to obtain parameters of exact AlGaN/GaN high electron mobility transistors such as electron density, the wave function, band gap, polarization charge, effective mass and dielectric constant, the hydrostatic pressure and temperature effects a...